Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61955
Title: COMPUTATION OF ELECTRON AND HOLE QUASI-FERMI LEVELS IN POLYCRYSTALLINE SILICON FILMS UNDER UNIFORM ILLUMINATION AND ZERO BIAS.
Authors: Ling, Chung Ho 
Issue Date: Jul-1985
Source: Ling, Chung Ho (1985-07). COMPUTATION OF ELECTRON AND HOLE QUASI-FERMI LEVELS IN POLYCRYSTALLINE SILICON FILMS UNDER UNIFORM ILLUMINATION AND ZERO BIAS.. IEEE Transactions on Electron Devices ED-32 (7) : 1288-1293. ScholarBank@NUS Repository.
Abstract: The analysis is based on a single trap level at the grain boundary (GB) and Shockley-Read-Hall recombination kinetics. Mobility values that are approximately one tenth those of the bulk values are used, and they are assumed to be constant throughout the entire grain-GB region. Results show that considerable bending of the quasi-Fermi levels (QFL) occurs in the vicinity of the GB, and this bending delta is dependent on illumination levels as well as on grain size. The maximum bending, delta //p 2. 5 KT/q for majority-carrier QFL and delta //n 10 KT/q for minority-carrier QFL, is found for a grain size of 0. 33 mu m and a doping of 2. 9 multiplied by 10**1 **6 cm**- **3 . The GB diffusion potential v//b decreases by as much as 14 KT/q with illumination for large grains but, for grains smaller than 0. 2, mu m v//b is insensitive to illumination up to 5 suns.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/61955
ISSN: 00189383
Appears in Collections:Staff Publications

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