Please use this identifier to cite or link to this item:
|Title:||Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation|
|Authors:||Ling, C.H. |
|Citation:||Ling, C.H., Ang, C.H., Ang, D.S. (2000). Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation. IEEE Transactions on Electron Devices 47 (3) : 650-652. ScholarBank@NUS Repository. https://doi.org/10.1109/16.824744|
|Abstract:||Two components of the low-field current have been identified in thin oxides, following 10 KeV X-ray irradiation. The first component, observed in the direct tunneling region, can be removed by a 100 °C anneal, and is also greatly suppressed if the irradiation is done in vacuum or in a nitrogen ambient, or if the oxide is preannealed before irradiation. The origin of this current is speculated to be related to adsorbed water molecules on the gate surface. The second component is observed to begin in the pre-Fowler-Nordheim tunneling (FNT) region and extends into the FNT region, only in oxides less than approximately 8 nm thick, and persists even after several days of anneal at 300 °C. This current exhibits a power law dependence on radiation dose. The origin of this second component is believed to be due to the trap-assisted tunneling via neutral electron traps, similar to the leakage current observed in the oxide after high-voltage stress.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 9, 2018
WEB OF SCIENCETM
checked on Oct 31, 2018
checked on Nov 3, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.