Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61921
Title: Cathodoluminescence contrast of localized defects part II. Defect investigation
Authors: Pey, K.L. 
Phang, J.C.H. 
Chan, D.S.H. 
Breeze, J.F.
Myhajlenko, S.
Keywords: Cathodoluminescence
cathodoluminescence contrast
defects
dislocations
scanning electron microscope
semiconductors
subsurface defects
Issue Date: 1995
Source: Pey, K.L.,Phang, J.C.H.,Chan, D.S.H.,Breeze, J.F.,Myhajlenko, S. (1995). Cathodoluminescence contrast of localized defects part II. Defect investigation. Scanning Microscopy 9 (2) : 367-380. ScholarBank@NUS Repository.
Abstract: Cathodoluminescence contrast from defects with different geometrical and electronic properties have been studied using the numerical model developed in Part I. The contrast of a localized subsurface defect exhibits a maxima at a specific beam energy E(max) which corresponds to the depth of the defect. The contrast of a dislocation which intersects the top surface perpendicularly is a decreasing function of beam energy. The differences in the image profiles of the two different kinds of defects allow the two types of imperfections to be distinguished. In addition, the resolution of a subsurface defect at beam energies lower than E(max) is only a function of defect size and is insensitive to the defect strength. The defect depth, size and strength can therefore be extracted sequentially. The extension of the model to the investigation of complex or multiple defects such as 'dot and halo' contrast is also illustrated.
Source Title: Scanning Microscopy
URI: http://scholarbank.nus.edu.sg/handle/10635/61921
ISSN: 08917035
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

57
checked on Dec 8, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.