Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/61920
DC Field | Value | |
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dc.title | Cathodoluminescence contrast of localized defects part I. Numerical model for simulation | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Phang, J.C.H. | |
dc.contributor.author | Breese, J.F. | |
dc.contributor.author | Myhajlenko, S. | |
dc.date.accessioned | 2014-06-17T06:45:28Z | |
dc.date.available | 2014-06-17T06:45:28Z | |
dc.date.issued | 1995 | |
dc.identifier.citation | Pey, K.L.,Chan, D.S.H.,Phang, J.C.H.,Breese, J.F.,Myhajlenko, S. (1995). Cathodoluminescence contrast of localized defects part I. Numerical model for simulation. Scanning Microscopy 9 (2) : 355-366. ScholarBank@NUS Repository. | |
dc.identifier.issn | 08917035 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/61920 | |
dc.description.abstract | A three-dimensional model has been developed for cathodoluminescence contrast of localized defects in semiconductors. The numerical model incorporates electron-solid interaction effects, charge transport phenomena and optical losses. Electron-solid interaction is modelled by a Monte Carlo method. Three-dimensional continuity equation and derivative boundary conditions are discretized by a central-difference quotients scheme. Localized defects are represented by regions of enhanced non-radiative recombination. The discretized linear difference equations of the boundary value problem are solved by the successive-over-relaxation method. A method for avoiding the divergence problem during the successive-over-relaxation calculation is illustrated. The solutions of the model are compared with the analytical results of several established models. | |
dc.source | Scopus | |
dc.subject | Cathodoluminescence | |
dc.subject | cathodoluminescence contrast | |
dc.subject | defects | |
dc.subject | Monte Carlo | |
dc.subject | numerical model | |
dc.subject | scanning electron microscope | |
dc.subject | semiconductors | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.contributor.department | INSTITUTE OF MICROELECTRONICS | |
dc.description.sourcetitle | Scanning Microscopy | |
dc.description.volume | 9 | |
dc.description.issue | 2 | |
dc.description.page | 355-366 | |
dc.description.coden | SCMIE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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