Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61920
Title: Cathodoluminescence contrast of localized defects part I. Numerical model for simulation
Authors: Pey, K.L. 
Chan, D.S.H. 
Phang, J.C.H. 
Breese, J.F.
Myhajlenko, S.
Keywords: Cathodoluminescence
cathodoluminescence contrast
defects
Monte Carlo
numerical model
scanning electron microscope
semiconductors
Issue Date: 1995
Source: Pey, K.L.,Chan, D.S.H.,Phang, J.C.H.,Breese, J.F.,Myhajlenko, S. (1995). Cathodoluminescence contrast of localized defects part I. Numerical model for simulation. Scanning Microscopy 9 (2) : 355-366. ScholarBank@NUS Repository.
Abstract: A three-dimensional model has been developed for cathodoluminescence contrast of localized defects in semiconductors. The numerical model incorporates electron-solid interaction effects, charge transport phenomena and optical losses. Electron-solid interaction is modelled by a Monte Carlo method. Three-dimensional continuity equation and derivative boundary conditions are discretized by a central-difference quotients scheme. Localized defects are represented by regions of enhanced non-radiative recombination. The discretized linear difference equations of the boundary value problem are solved by the successive-over-relaxation method. A method for avoiding the divergence problem during the successive-over-relaxation calculation is illustrated. The solutions of the model are compared with the analytical results of several established models.
Source Title: Scanning Microscopy
URI: http://scholarbank.nus.edu.sg/handle/10635/61920
ISSN: 08917035
Appears in Collections:Staff Publications

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