Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0022-0248(99)00705-8
Title: Can physical analysis aid in device characterization?
Authors: Chan, D.S.H. 
Chim, W.K. 
Phang, J.C.H. 
Liu, Y.Y.
Ng, T.H.
Xiao, H.
Issue Date: 1-Mar-2000
Source: Chan, D.S.H., Chim, W.K., Phang, J.C.H., Liu, Y.Y., Ng, T.H., Xiao, H. (2000-03-01). Can physical analysis aid in device characterization?. Journal of Crystal Growth 210 (1) : 323-330. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(99)00705-8
Abstract: Recent developments in electrical characterization and physical analysis techniques have led to new benefits from their combined application, especially in the investigation of device degradation and failure analysis. Drawing from two examples, one on silicon transistor devices and the other on III-V light-emitting diodes, results will be presented to illustrate that the combined application of such techniques does introduce interesting possibilities in analyzing and understanding device degradation problems.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/61914
ISSN: 00220248
DOI: 10.1016/S0022-0248(99)00705-8
Appears in Collections:Staff Publications

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