Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61810
Title: An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements
Authors: Ling, C.H. 
Cheng, Z.Y. 
Issue Date: 1-Dec-1997
Source: Ling, C.H.,Cheng, Z.Y. (1997-12-01). An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements. Applied Physics Letters 71 (22) : 3218-3220. ScholarBank@NUS Repository.
Abstract: Dominant trap energy levels in silicon are extracted from the temperature dependence of minority carrier recombination lifetime, observed through laser microwave photoconductive decay. A small correction is made to the Arrhenius plot by incorporating the weakly temperature-dependent term in the recombination lifetime expression, hitherto ignored. The new extraction technique is simple to implement and the results are in good agreement with published data. © 1997 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/61810
ISSN: 00036951
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

25
checked on Dec 14, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.