Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0268-1242/11/12/004
DC Field | Value | |
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dc.title | A transient capacitance-voltage method for characterizing DX centres | |
dc.contributor.author | Jia, Y.B. | |
dc.contributor.author | Grimmeiss, H.G. | |
dc.contributor.author | Li, M.F. | |
dc.date.accessioned | 2014-06-17T06:43:19Z | |
dc.date.available | 2014-06-17T06:43:19Z | |
dc.date.issued | 1996-12 | |
dc.identifier.citation | Jia, Y.B., Grimmeiss, H.G., Li, M.F. (1996-12). A transient capacitance-voltage method for characterizing DX centres. Semiconductor Science and Technology 11 (12) : 1787-1790. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/12/004 | |
dc.identifier.issn | 02681242 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/61727 | |
dc.description.abstract | A transient capacitance-voltage (TCV) method is proposed for measuring the net donor concentration, the free electron concentration and the space charge distribution of Schottky diodes prepared on Si-doped AlGaAs. The utility of this method is demonstrated by determining the binding energy of the DX centre from the temperature-dependent free electron concentration. Comparisons of the space charge distribution between theory and experiment are performed for the positive-U and negative-U model of the DX centres. The results obtained or the negative-U model are consistent with recent observations of multi-DX levels. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1088/0268-1242/11/12/004 | |
dc.description.sourcetitle | Semiconductor Science and Technology | |
dc.description.volume | 11 | |
dc.description.issue | 12 | |
dc.description.page | 1787-1790 | |
dc.description.coden | SSTEE | |
dc.identifier.isiut | A1996VY01700004 | |
Appears in Collections: | Staff Publications |
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