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|Title:||A transient capacitance-voltage method for characterizing DX centres|
|Citation:||Jia, Y.B., Grimmeiss, H.G., Li, M.F. (1996-12). A transient capacitance-voltage method for characterizing DX centres. Semiconductor Science and Technology 11 (12) : 1787-1790. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/12/004|
|Abstract:||A transient capacitance-voltage (TCV) method is proposed for measuring the net donor concentration, the free electron concentration and the space charge distribution of Schottky diodes prepared on Si-doped AlGaAs. The utility of this method is demonstrated by determining the binding energy of the DX centre from the temperature-dependent free electron concentration. Comparisons of the space charge distribution between theory and experiment are performed for the positive-U and negative-U model of the DX centres. The results obtained or the negative-U model are consistent with recent observations of multi-DX levels.|
|Source Title:||Semiconductor Science and Technology|
|Appears in Collections:||Staff Publications|
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