Please use this identifier to cite or link to this item: https://doi.org/12/004
Title: A transient capacitance-voltage method for characterizing DX centres
Authors: Jia, Y.B.
Grimmeiss, H.G.
Li, M.F. 
Issue Date: Dec-1996
Source: Jia, Y.B.,Grimmeiss, H.G.,Li, M.F. (1996-12). A transient capacitance-voltage method for characterizing DX centres. Semiconductor Science and Technology 11 (12) : 1787-1790. ScholarBank@NUS Repository. https://doi.org/12/004
Abstract: A transient capacitance-voltage (TCV) method is proposed for measuring the net donor concentration, the free electron concentration and the space charge distribution of Schottky diodes prepared on Si-doped AlGaAs. The utility of this method is demonstrated by determining the binding energy of the DX centre from the temperature-dependent free electron concentration. Comparisons of the space charge distribution between theory and experiment are performed for the positive-U and negative-U model of the DX centres. The results obtained or the negative-U model are consistent with recent observations of multi-DX levels.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/61727
ISSN: 02681242
DOI: 12/004
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