Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2007.06.025
Title: Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations
Authors: Dai, L. 
Tan, V.B.C. 
Yang, S.-W.
Wu, P.
Chen, X.-T.
Keywords: ab initio
Diffusion barrier
Interface
Low-k
Nitrogen
Pore-sealing
Issue Date: 15-Aug-2007
Source: Dai, L., Tan, V.B.C., Yang, S.-W., Wu, P., Chen, X.-T. (2007-08-15). Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations. Surface Science 601 (16) : 3366-3371. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2007.06.025
Abstract: Large scale ab initio molecular dynamics simulations were performed to investigate how Cu/ultra low-k systems are improved when N is incorporated into the pore-sealing layers. It was found that the high affinity of N to Ta and H gives rise to new phases that prevent H atoms from penetrating the Ta diffusion barrier layer. Consequently, the Ta layer forms organized structures with good barrier performance and electrical conductivity. Furthermore, a continuous ductile film is formed to seal the highly porous polymer dielectrics. Interfacial adhesion between the pore-sealing layer and the dielectrics is also enhanced by inter-diffusion. © 2007 Elsevier B.V. All rights reserved.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/61644
ISSN: 00396028
DOI: 10.1016/j.susc.2007.06.025
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