Please use this identifier to cite or link to this item:
|Title:||Study of the mechanism of nanoscale ductile mode cutting of silicon using molecular dynamics simulation|
|Keywords:||Ductile mode cutting|
|Source:||Cai, M.B., Li, X.P., Rahman, M. (2007-01). Study of the mechanism of nanoscale ductile mode cutting of silicon using molecular dynamics simulation. International Journal of Machine Tools and Manufacture 47 (1) : 75-80. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ijmachtools.2006.02.016|
|Abstract:||In cutting of brittle materials, it was observed that there is a brittle-ductile transition when two conditions are satisfied. One is that the undeformed chip thickness is smaller than the tool edge radius; the other is that the tool cutting edge radius should be small enough-on a nanoscale. However, the mechanism has not been clearly understood. In this study, the Molecular Dynamics method is employed to model and simulate the nanoscale ductile mode cutting of monocrystalline silicon wafer. From the simulated results, it is found that when the ductile cutting mode is achieved in the cutting process, the thrust force acting on the cutting tool is larger than the cutting force. As the undeformed chip thickness increases, the compressive stress in the cutting zone decreases, giving way to crack propagation in the chip formation zone. As the tool cutting edge radius increases, the shear stress in the workpiece material around the cutting edge decreases down to a lower level, at which the shear stress is insufficient to sustain dislocation emission in the chip formation zone, and crack propagation becomes dominating. Consequently, the chip formation mode changes from ductile to brittle. © 2006 Elsevier Ltd. All rights reserved.|
|Source Title:||International Journal of Machine Tools and Manufacture|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 6, 2017
WEB OF SCIENCETM
checked on Nov 21, 2017
checked on Dec 10, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.