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|Title:||Stable bipolar surface potential behavior of copper-doped zinc oxide films studied by Kelvin probe force microscopy|
|Citation:||Wong, M.F., Herng, T.S., Zhang, Z., Zeng, K., Ding, J. (2010-12-06). Stable bipolar surface potential behavior of copper-doped zinc oxide films studied by Kelvin probe force microscopy. Applied Physics Letters 97 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3521281|
|Abstract:||The surface potential of undoped and copper-doped zinc oxide (ZnO:Cu) films has been studied using the Kelvin probe force microscopy at ambient condition. In contrast to the undoped ZnO with unipolar behavior, the ZnO:Cu film exhibits a bipolar surface potential behavior under a dc bias. The localized hole trapping phenomenon is attributed to the presence of Cu ions in ZnO films. With an appropriate amount of the Cu ions (∼8 at. %), the charge trapping is reasonably stable over a period of 20 h, which can be associated with the presence of oxygen vacancies. This coexistence of Cu ions and oxygen vacancies in ZnO gives rise to stable bipolar behavior, paving way to potential charge storage application. © 2010 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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