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|Title:||Residual stress in piezoelectric poly(vinylidene-fluoride-co- trifluoroethylene) thin films deposited on silicon substrates|
|Citation:||Oh, S.R., Yao, K., Chow, C.L., Tay, F.E.H. (2010-12-01). Residual stress in piezoelectric poly(vinylidene-fluoride-co- trifluoroethylene) thin films deposited on silicon substrates. Thin Solid Films 519 (4) : 1441-1444. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.09.042|
|Abstract:||The residual stress and its evolution with time in poly(vinylidene- fluoride-co-trifluoroethylene) (P(VDF-TrFE) (72/28)) piezoelectric polymer thin films deposited on silicon wafers were investigated using the wafer curvature method. Double-side polished silicon wafers with minimized initial wafer warpage were used to replace single-side polished silicon wafers to obtain significantly improved reliability for the measurement of the low residual stress in the P(VDF-TrFE) polymer thin films. Our measurement results showed that all the P(VDF-TrFE) films possessed a tensile residual stress, and the residual stress slowly decreased with time. Our analysis further indicates that the tensile stress could arise from the thermal mismatch between the P(VDF-TrFE) film and the silicon substrate. Besides possible viscoelastic creep mechanism in thermoplastic P(VDF-TrFE) films, microcracks with widths in the range of tens of nanometers appeared to release the tensile residual stress. © 2010 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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