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|Title:||Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems|
|Authors:||Dai, L. |
|Citation:||Dai, L., Tan, V.B.C., Yang, S.-W., Wu, P., Chen, X.-T. (2007). Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems. Applied Physics Letters 90 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2432948|
|Abstract:||In ultralow- k dielectric systems, the porous dielectrics are normally sealed by a SiC film before the deposition of a Ta diffusion barrier layer. However, the Ta barrier effects are negated when the SiC films are fabricated by plasma-enhanced chemical vapor deposition (PECVD). Through large scale ab initio molecular dynamics simulations, the authors found that the barrier degradation is due to H atoms introduced during PECVD. The H impurities diffuse into and transform an otherwise dense Ta layer into a loose amorphous phase which is ineffective as a diffusion barrier. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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