Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2432948
Title: Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems
Authors: Dai, L. 
Tan, V.B.C. 
Yang, S.-W.
Wu, P.
Chen, X.-T.
Issue Date: 2007
Citation: Dai, L., Tan, V.B.C., Yang, S.-W., Wu, P., Chen, X.-T. (2007). Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems. Applied Physics Letters 90 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2432948
Abstract: In ultralow- k dielectric systems, the porous dielectrics are normally sealed by a SiC film before the deposition of a Ta diffusion barrier layer. However, the Ta barrier effects are negated when the SiC films are fabricated by plasma-enhanced chemical vapor deposition (PECVD). Through large scale ab initio molecular dynamics simulations, the authors found that the barrier degradation is due to H atoms introduced during PECVD. The H impurities diffuse into and transform an otherwise dense Ta layer into a loose amorphous phase which is ineffective as a diffusion barrier. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/60630
ISSN: 00036951
DOI: 10.1063/1.2432948
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