Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10854-008-9610-8
Title: Influence of thickness on nanomechanical behavior of Black Diamond™ low dielectric thin films for interconnect and packaging applications
Authors: Sekhar, V.N.
Chai, T.C.
Balakumar, S.
Shen, Lu.
Sinha, S.K. 
Tay, A.A.O. 
Yoon, S.W.
Issue Date: 2009
Source: Sekhar, V.N.,Chai, T.C.,Balakumar, S.,Shen, Lu.,Sinha, S.K.,Tay, A.A.O.,Yoon, S.W. (2009). Influence of thickness on nanomechanical behavior of Black Diamond™ low dielectric thin films for interconnect and packaging applications. Journal of Materials Science: Materials in Electronics 20 (1) : 74-86. ScholarBank@NUS Repository. https://doi.org/10.1007/s10854-008-9610-8
Abstract: In the present study, we have investigated the thickness dependence of mechanical properties of the Black Diamond™ (SiOC:H, BD, Low-k) films, which are of great interest in current Cu/low-k Back End of the Line (BEOL) interconnect/packaging technologies. For this investigation the BD thin films of six different thicknesses 100, 300, 500, 700, 1,000 and 1,200 nm were deposited on the 8′ Si wafer by using plasma enhanced chemical vapor deposition (PECVD) technique. Nanoindentation and nanoscratch tests of the BD films were performed by using the Nano Indenter® XP (MTS Corp. USA). In nanoindentation testing of the BD films, significant differences in the elastic modulus of the BD films were observed. In nanoscratch testing, it is found that the critical load (Lc) and scratch width increases as the thickness of the film increases. Cross-sectional analysis of residual nanoindentation impressions was carried out using atomic force microscopy (AFM) to study the deformation behavior. The nanoindentation and nanoscratch responses of the BD thin films of six different thicknesses are different and they are expected mainly due to the molecular reorganization in thin/ultra thin films. © Springer Science+Business Media, LLC 2008.
Source Title: Journal of Materials Science: Materials in Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/60540
ISSN: 09574522
DOI: 10.1007/s10854-008-9610-8
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