Please use this identifier to cite or link to this item:
|Title:||Excimer UV-assisted rapid thermal annealing of PbLa (Zr,Ti) O3 thin films by a sol-gel deposition method|
|Citation:||Shannigrahi, S.R., Lim, X., Tay, F.E.H. (2007). Excimer UV-assisted rapid thermal annealing of PbLa (Zr,Ti) O3 thin films by a sol-gel deposition method. Journal of Applied Physics 101 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2424534|
|Abstract:||Excimer UV-assisted rapid thermal annealing (UV-RTA) process has been employed to fabricate sol-gel derived ferroelectric Pb0.97 La0.03 (Zr0.53 Ti0.47) O3 (PLZT) thin films on PtTiSi O2 Si substrates. X-ray diffraction analysis showed that the single phase PLZT thin film can be achieved at a relatively low processing temperature of 580 °C. The films appeared to have improved dielectric properties with dielectric constant (ε) and loss (tan δ) values of 3300 and 0.03 at 1 kHz, respectively. Comparatively good remnant polarization (Pr) value of 36 μC cm-2 and coercive field (Ec) value of 60 kV cm-1 along with a good fatigue resistance up to 1010 switching cycles have been observed. This method of fabrication of the Pb-based material with the aid of UV-RTA at a comparatively lower temperature opens the door for their better employability in the Si integrated circuit technology. © 2007 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 11, 2018
WEB OF SCIENCETM
checked on Jun 25, 2018
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.