Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp0274031
Title: Deposition of ultrathin fluoropolymer films on Si(100) and GaAs(100) surfaces by RF magnetron sputtering of poly(tetrafluoroethylene-co-hexafluoropropylene)
Authors: Yang, G.H.
Zhang, Y. 
Kang, E.T. 
Neoh, K.G. 
Issue Date: 27-Mar-2003
Source: Yang, G.H., Zhang, Y., Kang, E.T., Neoh, K.G. (2003-03-27). Deposition of ultrathin fluoropolymer films on Si(100) and GaAs(100) surfaces by RF magnetron sputtering of poly(tetrafluoroethylene-co-hexafluoropropylene). Journal of Physical Chemistry B 107 (12) : 2780-2787. ScholarBank@NUS Repository. https://doi.org/10.1021/jp0274031
Abstract: Dielectric fluoropolymer films of 10-50 nm in thickness were deposited on the (100)-oriented single-crystal silicon and gallium arsenide wafers via RF plasma sputtering of a poly(tetrafluoroethylene-co-hexafluoropropylene) (FEP) target. X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, water contact angle measurement, and Fourier transform infrared spectroscopy results indicated that the chemical composition and molecular structure of the sputter-deposited polymer films depended strongly on the type of the sputtering gas used. The dielectric constant of the argon-plasma sputter-deposited fluoropolymer film is about 2.1, which is comparable to those of the pristine FEP and poly(tetrafluoroethylene) films. It was shown that the argon plasma sputter-deposited FEP (s-FEP(Ar)) film as thin as 6 nm could effectively passivate the HCl-etched GaAs(100) substrate under atmospheric conditions. The growth of the surface oxide layer was effectively hindered by the ultrathin s-FEP(Ar) barrier when the passivated GaAs(100) surface was exposed to the ambient air for a prolonged period of time. Peel adhesion test results suggested that all of the sputter-deposited films adhered strongly to the Si(100) and GaAs(100) surfaces.
Source Title: Journal of Physical Chemistry B
URI: http://scholarbank.nus.edu.sg/handle/10635/59854
ISSN: 10895647
DOI: 10.1021/jp0274031
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