Please use this identifier to cite or link to this item:
|Title:||Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication|
|Source:||Ji, J.,Tay, F.E.H.,Miao, J.,Sun, J. (2006-04-01). Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication. Journal of Physics: Conference Series 34 (1) : 1137-1142. ScholarBank@NUS Repository. https://doi.org/1/188|
|Abstract:||This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions. © 2006 IOP Publishing Ltd.|
|Source Title:||Journal of Physics: Conference Series|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 7, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.