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|Title:||Adhesive bonding with SU-8 at wafer level for microfluidic devices|
|Authors:||Yu, L. |
|Citation:||Yu, L., Tay, F.E.H., Xu, G., Chen, B., Avram, M., Iliescu, C. (2006-04-01). Adhesive bonding with SU-8 at wafer level for microfluidic devices. Journal of Physics: Conference Series 34 (1) : 776-781. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/34/1/128|
|Abstract:||The present work proposes an adhesive bonding technique, at wafer level, using SU-8 negative photoresist as intermediate layer. The adhesive was selective imprint on one of the bonding surface. The main applications are in microfluidic area where a low temperature bonding is required. The method consists of three major steps. First the adhesive layer is deposited on one of the bonding surface by contact imprinting from a dummy wafer where the SU-8 photoresist was initially spun, or from a Teflon cylinder. Second, the wafers to be bonded are placed in contact and aligned. In the last step, the bonding process is performed at temperatures between 100°C and 200°C, a pressure of 1000 N in vacuum on a classical wafer bonding system. The results indicate a low stress value induced by the bonding technique. In the same time the process presents a high yield: 95-100%. The technique was successfully tested in the fabrication process of a dielectrophoretic device. © 2006 IOP Publishing Ltd.|
|Source Title:||Journal of Physics: Conference Series|
|Appears in Collections:||Staff Publications|
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