Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/58170
Title: Effect of etchant concentration and defects on pyramid formation in TMAH etched silicon
Authors: Choi, W.K. 
Thong, J.T.L. 
Bai, Y. 
Newaskar, P.
Luo, P.
Issue Date: May-1999
Source: Choi, W.K.,Thong, J.T.L.,Bai, Y.,Newaskar, P.,Luo, P. (1999-05). Effect of etchant concentration and defects on pyramid formation in TMAH etched silicon. Bulletin of Materials Science 22 (3) : 615-621. ScholarBank@NUS Repository.
Abstract: An investigation on the effect of TMAH concentration on the etch of silicon, and the influence of etchant concentration, ambient temperature and wafer thermal history on the formation of pyramids at the surface of TMAH etched silicon has been carried out. From the results obtained from this study, we are able to explain the influence of TMAH concentration and ambient temperature on the silicon etch rate and the changes occurring at the silicon surface satisfactorily using the pH theory. However, the results from wafers with different thermal history seem to favour the defects theory. We suggest that in order to explain the etching mechanism of TMAH of silicon satisfactorily, a combination of pH and defects theories is necessary.
Source Title: Bulletin of Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/58170
ISSN: 02504707
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

42
checked on Mar 9, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.