Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.870252
Title: Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
Authors: Chen, J.D. 
Yu, H.Y.
Li, M.F. 
Kwong, D.-L.
van Dal, M.J.H.
Kittl, J.A.
Lauwers, A.
Absil, P.
Jurczak, M.
Biesemans, S.
Keywords: Band edge workfunction
Fully silicided (FUSI)
N-MOSFETs
Ni/Yb
Issue Date: Mar-2006
Source: Chen, J.D.,Yu, H.Y.,Li, M.F.,Kwong, D.-L.,van Dal, M.J.H.,Kittl, J.A.,Lauwers, A.,Absil, P.,Jurczak, M.,Biesemans, S. (2006-03). Yb-doped Ni FUSI for the n-MOSFETs gate electrode application. IEEE Electron Device Letters 27 (3) : 160-162. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.870252
Abstract: In this letter, an n-type near-band edge fully silicided (FUSI) material-Yb-doped Ni FUSI is demonstrated for the first time. By doping Yb into Ni FUSI, it is shown that while maintaining the same equivalent oxide thickness and the similar device reliability, the work function of Ni FUSI (on SiON dielectrics) could be tuned from 4.72 to 4.22 eV. Yb-doped Ni FUSI is promising for the gate electrode application in n-MOSFETs. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57828
ISSN: 07413106
DOI: 10.1109/LED.2006.870252
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