Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.911608
Title: Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
Authors: Wang, X.P.
Li, M.-F. 
Yu, H.Y.
Yang, J.J.
Chen, J.D. 
Zhu, C.X. 
Du, A.Y.
Loh, W.Y.
Biesemans, S.
Chin, A.
Lo, G.Q.
Kwong, D.-L.
Keywords: CMOS
Fermi level pinning
HfLaO
High-κ dielectric
Interdiffusion
Metal gate
Work function
Issue Date: Jan-2008
Source: Wang, X.P., Li, M.-F., Yu, H.Y., Yang, J.J., Chen, J.D., Zhu, C.X., Du, A.Y., Loh, W.Y., Biesemans, S., Chin, A., Lo, G.Q., Kwong, D.-L. (2008-01). Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric. IEEE Electron Device Letters 29 (1) : 50-53. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.911608
Abstract: For the first time, we demonstrate experimentally that using HfLaO high-κ gate dielectric and vertical stacks of TaN/Ru metal layers, dual metal gates with continuously tunable work function over a very wide range from 3.9 to 5.2 eV, can be achieved after 1000 °C annealing required by a conventional CMOS source/drain activation process. The wide tunability of work function for this bilayermetal structure is attributed to metal interdiffusion during annealing and the release of Fermi level pinning between metal gates (Ru and TaN) and HfLaO. Moreover, this change is thermally stable and unaffected by a subsequent high temperature process. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57820
ISSN: 07413106
DOI: 10.1109/LED.2007.911608
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Dec 13, 2017

WEB OF SCIENCETM
Citations

4
checked on Nov 15, 2017

Page view(s)

42
checked on Dec 9, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.