Please use this identifier to cite or link to this item:
|Title:||Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric|
Fermi level pinning
|Source:||Wang, X.P., Li, M.-F., Yu, H.Y., Yang, J.J., Chen, J.D., Zhu, C.X., Du, A.Y., Loh, W.Y., Biesemans, S., Chin, A., Lo, G.Q., Kwong, D.-L. (2008-01). Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric. IEEE Electron Device Letters 29 (1) : 50-53. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.911608|
|Abstract:||For the first time, we demonstrate experimentally that using HfLaO high-κ gate dielectric and vertical stacks of TaN/Ru metal layers, dual metal gates with continuously tunable work function over a very wide range from 3.9 to 5.2 eV, can be achieved after 1000 °C annealing required by a conventional CMOS source/drain activation process. The wide tunability of work function for this bilayermetal structure is attributed to metal interdiffusion during annealing and the release of Fermi level pinning between metal gates (Ru and TaN) and HfLaO. Moreover, this change is thermally stable and unaffected by a subsequent high temperature process. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 13, 2017
WEB OF SCIENCETM
checked on Nov 15, 2017
checked on Dec 9, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.