Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCAPT.2009.2016108
Title: Wafer-level hermetic bonding using Sn/In and Cu/Ti/Au metallization
Authors: Yu, D.-Q.
Yan, L.L.
Lee, C. 
Choi, W.K.
Thew, S.
Foo, C.K.
Lau, J.H.
Keywords: Hermeticity
In-Sn
Microelectromechanical systems (MEMS)
Reliability
Wafer bonding
Wafer-level packaging
Issue Date: Dec-2009
Source: Yu, D.-Q.,Yan, L.L.,Lee, C.,Choi, W.K.,Thew, S.,Foo, C.K.,Lau, J.H. (2009-12). Wafer-level hermetic bonding using Sn/In and Cu/Ti/Au metallization. IEEE Transactions on Components and Packaging Technologies 32 (4) : 926-934. ScholarBank@NUS Repository. https://doi.org/10.1109/TCAPT.2009.2016108
Abstract: Low-temperature hermetic wafer bonding using In/Sn interlayer and Cu/Ti/Au metallization was investigated for microelectromechanical systems packaging application. In this case, the thin Ti layer was used as a buffer layer to prevent the diffusion between solder interlayer and Cu after deposition and to save more solders for diffusion bonding process. Bonding was performed in a wafer bonder at 180 and 150°C for 20 min with a pressure of 5.5 MPa. It was found that bonding at 180° C voids free seal joints composed of high-temperature intermetallic compounds were obtained with good hermeticity. However, with bonding at 150°C, voids were generated along the seal joint, which caused poor hermeticity compared with that bonded at 180°C. After four types of reliability testspressure cooker test, high humidity storage, high-temperature storage, and temperature cycling testdies bonded at 180°C showed good reliability properties evidenced by hermeticity test and shear tests. Results presented here prove that high-yield and low-temperature hermetic bonding using Sn/In/Cu metallization with thin Ti buffer layer can be achieved. © 2009 IEEE.
Source Title: IEEE Transactions on Components and Packaging Technologies
URI: http://scholarbank.nus.edu.sg/handle/10635/57791
ISSN: 15213331
DOI: 10.1109/TCAPT.2009.2016108
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