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|Title:||Wafer-level hermetic bonding using Sn/In and Cu/Ti/Au metallization|
Microelectromechanical systems (MEMS)
|Citation:||Yu, D.-Q., Yan, L.L., Lee, C., Choi, W.K., Thew, S., Foo, C.K., Lau, J.H. (2009-12). Wafer-level hermetic bonding using Sn/In and Cu/Ti/Au metallization. IEEE Transactions on Components and Packaging Technologies 32 (4) : 926-934. ScholarBank@NUS Repository. https://doi.org/10.1109/TCAPT.2009.2016108|
|Abstract:||Low-temperature hermetic wafer bonding using In/Sn interlayer and Cu/Ti/Au metallization was investigated for microelectromechanical systems packaging application. In this case, the thin Ti layer was used as a buffer layer to prevent the diffusion between solder interlayer and Cu after deposition and to save more solders for diffusion bonding process. Bonding was performed in a wafer bonder at 180 and 150°C for 20 min with a pressure of 5.5 MPa. It was found that bonding at 180° C voids free seal joints composed of high-temperature intermetallic compounds were obtained with good hermeticity. However, with bonding at 150°C, voids were generated along the seal joint, which caused poor hermeticity compared with that bonded at 180°C. After four types of reliability testspressure cooker test, high humidity storage, high-temperature storage, and temperature cycling testdies bonded at 180°C showed good reliability properties evidenced by hermeticity test and shear tests. Results presented here prove that high-yield and low-temperature hermetic bonding using Sn/In/Cu metallization with thin Ti buffer layer can be achieved. © 2009 IEEE.|
|Source Title:||IEEE Transactions on Components and Packaging Technologies|
|Appears in Collections:||Staff Publications|
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