Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride

Please use this identifier to cite or link to this item: https://doi.org/10.1002/1521-396X(200111)188:1<329

Title:	Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride
Authors:	Gu, W. Chua, S.J. Zhang, X.H. Hao, M.S. Zhang, J. Wang, W. Liu, W.
Issue Date:	Nov-2001
Citation:	Gu, W.,Chua, S.J.,Zhang, X.H.,Hao, M.S.,Zhang, J.,Wang, W.,Liu, W. (2001-11). Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride. Physica Status Solidi (A) Applied Research 188 (1) : 329-331. ScholarBank@NUS Repository. https://doi.org/10.1002/1521-396X(200111)188:1<329
Abstract:	Visible-blind metal-semiconductor-metal ultra-violet detectors based on epitaxially laterally overgrown gallium nitride were fabricated. I-V measurement showed good Schottky contact and very low dark current, which was only 723 nA at 10 V and 544.8 pA at 3 V. The photocurrent spectrum showed a cut-off wavelength at 366 nm and an ultraviolet/visible ratio of three orders of magnitude. The responsivity is 0.05 A/W at 5 V bias.
Source Title:	Physica Status Solidi (A) Applied Research
URI:	http://scholarbank.nus.edu.sg/handle/10635/57785
ISSN:	00318965
DOI:	10.1002/1521-396X(200111)188:1<329
Appears in Collections:	Staff Publications

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