Please use this identifier to cite or link to this item: https://doi.org/10.1002/1521-396X(200111)188:1<329
Title: Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride
Authors: Gu, W.
Chua, S.J. 
Zhang, X.H.
Hao, M.S.
Zhang, J.
Wang, W.
Liu, W.
Issue Date: Nov-2001
Source: Gu, W.,Chua, S.J.,Zhang, X.H.,Hao, M.S.,Zhang, J.,Wang, W.,Liu, W. (2001-11). Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride. Physica Status Solidi (A) Applied Research 188 (1) : 329-331. ScholarBank@NUS Repository. https://doi.org/10.1002/1521-396X(200111)188:1<329
Abstract: Visible-blind metal-semiconductor-metal ultra-violet detectors based on epitaxially laterally overgrown gallium nitride were fabricated. I-V measurement showed good Schottky contact and very low dark current, which was only 723 nA at 10 V and 544.8 pA at 3 V. The photocurrent spectrum showed a cut-off wavelength at 366 nm and an ultraviolet/visible ratio of three orders of magnitude. The responsivity is 0.05 A/W at 5 V bias.
Source Title: Physica Status Solidi (A) Applied Research
URI: http://scholarbank.nus.edu.sg/handle/10635/57785
ISSN: 00318965
DOI: 10.1002/1521-396X(200111)188:1<329
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