Please use this identifier to cite or link to this item:
|Title:||Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride|
|Source:||Gu, W.,Chua, S.J.,Zhang, X.H.,Hao, M.S.,Zhang, J.,Wang, W.,Liu, W. (2001-11). Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride. Physica Status Solidi (A) Applied Research 188 (1) : 329-331. ScholarBank@NUS Repository. https://doi.org/10.1002/1521-396X(200111)188:1<329|
|Abstract:||Visible-blind metal-semiconductor-metal ultra-violet detectors based on epitaxially laterally overgrown gallium nitride were fabricated. I-V measurement showed good Schottky contact and very low dark current, which was only 723 nA at 10 V and 544.8 pA at 3 V. The photocurrent spectrum showed a cut-off wavelength at 366 nm and an ultraviolet/visible ratio of three orders of magnitude. The responsivity is 0.05 A/W at 5 V bias.|
|Source Title:||Physica Status Solidi (A) Applied Research|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 8, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.