Please use this identifier to cite or link to this item:
|Title:||Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors|
|Source:||Low, T., Li, M.F., Yeo, Y.C., Fan, W.J., Ng, S.T., Kwong, D.L. (2005-07-15). Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics 98 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1948528|
|Abstract:||The ultrathin body (UTB) silicon-on-insulator metal-oxide-semiconductor field-effect transistor (MOSFET) is promising for sub- 50-nm complementary metal-oxide semiconductor technologies. To explore a high-mobility channel for this technology, this paper presents an examination of Si and Ge hole sub-band structure in UTB MOSFETs under different surface orientations. The dependence of the hole subband structure on the film thickness (TBody) was also studied in this work. We found that the valence-band mixing in the vicinity of the zone center Γ is strongly dependent on TBody for both Si and Ge, particularly for the 〈110〉 surface orientation. This gives rise to the following two phenomena that crucially affect the electrical characteristics of p -MOSFETs: (1) an anomalous increase of quantization mass for 〈110〉 Si and Ge surfaces as TBody is scaled below 5 nm. (2) The dependence of energy dispersion and anisotropy on TBody especially for the 〈110〉 surface, which advantageously increases hole velocity along the  channel as TBody is decreased. The density of states for different surface orientations are also calculated, and show that-for any given surface orientation-Ge has a smaller density of states than Si. The Ge 〈110〉 surface has the lowest density of states among the surface orientations considered. © 2005 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 5, 2017
WEB OF SCIENCETM
checked on Dec 5, 2017
checked on Dec 11, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.