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https://doi.org/10.1063/1.4769042
DC Field | Value | |
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dc.title | Universal scaling of resistivity in bilayer graphene | |
dc.contributor.author | Gopinadhan, K. | |
dc.contributor.author | Jun Shin, Y. | |
dc.contributor.author | Yang, H. | |
dc.date.accessioned | 2014-06-17T03:09:49Z | |
dc.date.available | 2014-06-17T03:09:49Z | |
dc.date.issued | 2012-11-26 | |
dc.identifier.citation | Gopinadhan, K., Jun Shin, Y., Yang, H. (2012-11-26). Universal scaling of resistivity in bilayer graphene. Applied Physics Letters 101 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4769042 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/57754 | |
dc.description.abstract | We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution. © 2012 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4769042 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.4769042 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 101 | |
dc.description.issue | 22 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000311967000072 | |
Appears in Collections: | Staff Publications |
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