Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4769042
Title: Universal scaling of resistivity in bilayer graphene
Authors: Gopinadhan, K. 
Jun Shin, Y.
Yang, H. 
Issue Date: 26-Nov-2012
Source: Gopinadhan, K., Jun Shin, Y., Yang, H. (2012-11-26). Universal scaling of resistivity in bilayer graphene. Applied Physics Letters 101 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4769042
Abstract: We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57754
ISSN: 00036951
DOI: 10.1063/1.4769042
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