Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2940596
Title: Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregation
Authors: Sinha, M.
Chor, E.F. 
Yeo, Y.-C. 
Issue Date: 2008
Source: Sinha, M., Chor, E.F., Yeo, Y.-C. (2008). Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregation. Applied Physics Letters 92 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2940596
Abstract: We report the Schottky barrier height (SBH) tuning at the nickel silicide (NiSi) p-Si junction by the introduction of aluminum (Al) using ion implantation and its segregation after silicidation. The SBH for holes has been found to decrease with increasing concentration of Al at the NiSip-Si interface. We demonstrate the achievement of one of the lowest reported SBH for holes of 0.12 eV, with less than 0.1 at. % Al in NiSi, which is promising for application in p -channel Schottky source/drain transistors. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57724
ISSN: 00036951
DOI: 10.1063/1.2940596
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