Please use this identifier to cite or link to this item:
|Title:||Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregation|
|Source:||Sinha, M., Chor, E.F., Yeo, Y.-C. (2008). Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregation. Applied Physics Letters 92 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2940596|
|Abstract:||We report the Schottky barrier height (SBH) tuning at the nickel silicide (NiSi) p-Si junction by the introduction of aluminum (Al) using ion implantation and its segregation after silicidation. The SBH for holes has been found to decrease with increasing concentration of Al at the NiSip-Si interface. We demonstrate the achievement of one of the lowest reported SBH for holes of 0.12 eV, with less than 0.1 at. % Al in NiSi, which is promising for application in p -channel Schottky source/drain transistors. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 21, 2018
WEB OF SCIENCETM
checked on Jan 16, 2018
checked on Feb 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.