Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.819268
Title: Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
Authors: Yang, X.
Liang, Y.C. 
Samudra, G.S. 
Liu, Y.
Keywords: Breakdown voltage
Ideal silicon limit
Ideal superjunction limit
Power superjunction MOSFET
Specific on-resistance
Issue Date: Nov-2003
Source: Yang, X., Liang, Y.C., Samudra, G.S., Liu, Y. (2003-11). Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width. IEEE Electron Device Letters 24 (11) : 704-706. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.819268
Abstract: The superjunction (SJ) MOSFET power device is highly recognized for its higher blocking capability and lower on-state resistance that breaks the conventional unipolar silicon limit However, SJ devices below 100 V rating incur constraint of unrealistic narrower column widths [1], [2] and their performance is greatly handicapped due to difficulties in formation of perfect charge-balanced SJ p-n columns by current process technology. Based on the alternative approach of tunable oxide-bypassed (TOB) SJ MOSFET concept proposed in [15], a TOB-UMOS device of 79 V rating has been successfully fabricated for the first time. Laboratory measurements indicate that the device has broken the ideal SJ MOSFET performance line at equal column width of 3.5 μm, and potentially the ideal silicon limit as well.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57717
ISSN: 07413106
DOI: 10.1109/LED.2003.819268
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