Please use this identifier to cite or link to this item: https://doi.org/10.1109/LPT.2006.888997
Title: Tunable GHz repetitive ps pulse InGaN laser
Authors: Chuah, C.W.
Xu, B.
Tan, T.S.
Xiang, N. 
Chong, T.C.
Keywords: Gain-switching
InGaN semiconductor laser
Picosecond (ps) laser source
Semiconductor pulse laser and tunable repetition frequency
Issue Date: 15-Jan-2007
Source: Chuah, C.W.,Xu, B.,Tan, T.S.,Xiang, N.,Chong, T.C. (2007-01-15). Tunable GHz repetitive ps pulse InGaN laser. IEEE Photonics Technology Letters 19 (2) : 70-72. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2006.888997
Abstract: Using sinusoidal waveform, an InGaN laser unit which incorporated a 50-Ω impedance-matching unit was used to generate <70-ps pulses with a repetition frequency ranging from 800 MHz to 3.0 GHz. At 1.0 GHz, the pulses with a pulsewidth of 31 ps and a peak power of >450 mW were obtained using +27 dBm of RF power. Tuning characteristics of this gain-switching laser were studied. © 2006 IEEE.
Source Title: IEEE Photonics Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57715
ISSN: 10411135
DOI: 10.1109/LPT.2006.888997
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