Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2jm32590j
Title: Transferability of solution processed epitaxial Ga:ZnO films; Tailored for gas sensor and transparent conducting oxide applications
Authors: Kevin, M.
Tho, W.H.
Ho, G.W. 
Issue Date: 28-Aug-2012
Source: Kevin, M., Tho, W.H., Ho, G.W. (2012-08-28). Transferability of solution processed epitaxial Ga:ZnO films; Tailored for gas sensor and transparent conducting oxide applications. Journal of Materials Chemistry 22 (32) : 16442-16447. ScholarBank@NUS Repository. https://doi.org/10.1039/c2jm32590j
Abstract: Problems associated with the costly production of Ga doped ZnO (Ga:ZnO) related to high-quality epitaxial films, which can only be grown on a lattice-matched single-crystal substrate using a vacuum system, have limited its wide-scale commercial applications. Moreover, for many practical applications, large-area devices must be fabricated on non-epitaxial glass, metal and other substrates. Here, we demonstrate a cost effective, low temperature aqueous synthesis, doping and transfer of high quality epitaxial Ga:ZnO on a non-epitaxial substrate. The capability of transferring epitaxial Ga:ZnO films may promote quick deployment of these high quality films for various electronic applications. We conclude the work with the demonstration of the Ga:ZnO films for gas sensing and dye-sensitized solar cell (DSSC) applications. © The Royal Society of Chemistry 2012.
Source Title: Journal of Materials Chemistry
URI: http://scholarbank.nus.edu.sg/handle/10635/57696
ISSN: 09599428
DOI: 10.1039/c2jm32590j
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