Please use this identifier to cite or link to this item:
|Title:||Transferability of solution processed epitaxial Ga:ZnO films; Tailored for gas sensor and transparent conducting oxide applications|
|Citation:||Kevin, M., Tho, W.H., Ho, G.W. (2012-08-28). Transferability of solution processed epitaxial Ga:ZnO films; Tailored for gas sensor and transparent conducting oxide applications. Journal of Materials Chemistry 22 (32) : 16442-16447. ScholarBank@NUS Repository. https://doi.org/10.1039/c2jm32590j|
|Abstract:||Problems associated with the costly production of Ga doped ZnO (Ga:ZnO) related to high-quality epitaxial films, which can only be grown on a lattice-matched single-crystal substrate using a vacuum system, have limited its wide-scale commercial applications. Moreover, for many practical applications, large-area devices must be fabricated on non-epitaxial glass, metal and other substrates. Here, we demonstrate a cost effective, low temperature aqueous synthesis, doping and transfer of high quality epitaxial Ga:ZnO on a non-epitaxial substrate. The capability of transferring epitaxial Ga:ZnO films may promote quick deployment of these high quality films for various electronic applications. We conclude the work with the demonstration of the Ga:ZnO films for gas sensing and dye-sensitized solar cell (DSSC) applications. © The Royal Society of Chemistry 2012.|
|Source Title:||Journal of Materials Chemistry|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 14, 2019
WEB OF SCIENCETM
checked on Feb 5, 2019
checked on Dec 8, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.