Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2010.2089988
Title: Theoretical calculation of the magnetic resonance frequency of the electron spin embedded inside a silicon host for solid-state quantum computing
Authors: Hui, H.T. 
Mirzaei, H.
Keywords: Electromagnetic simulation method
electron spin
perturbation theory
quantum computer realization
solid-state device
Issue Date: Feb-2011
Source: Hui, H.T.,Mirzaei, H. (2011-02). Theoretical calculation of the magnetic resonance frequency of the electron spin embedded inside a silicon host for solid-state quantum computing. IEEE Transactions on Electron Devices 58 (2) : 512-516. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2089988
Abstract: The electron-spin magnetic resonance frequency of an electron-spin qubit structure that is proposed for the realization of a quantum computer is rigorously determined by a numerical method. The potential distribution inside the silicon qubit structure is accurately calculated by an electromagnetic simulation method, and the perturbation theory to the second order is formulated to obtain the magnetic resonance frequency of a phosphorus donor electron spin. Our results showed that, for the same qubit structure (Si:P), as originally proposed by Kane for a nuclear-spin qubit quantum computer, a smaller static magnetic field Bis in favor of producing a wider tunable bandwidth for the magnetic resonance frequency of the electron spin. Our results also reveal that the use of SiGe as an alternative insulation material to the A-gate structure can improve the control efficiency of the A-gate voltage. © 2006 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/57642
ISSN: 00189383
DOI: 10.1109/TED.2010.2089988
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