Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/57638
Title: The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide
Authors: Lin, W.H.
Pey, K.L. 
Dong, Z.
Chooi, S.Y.M. 
Ang, C.H.
Zheng, J.Z.
Keywords: Percolation path
Soft breakdown
Ultrathin gate oxide
Weibull distribution
Issue Date: May-2003
Citation: Lin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.M., Ang, C.H., Zheng, J.Z. (2003-05). The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide. IEEE Electron Device Letters 24 (5) : 336-338. ScholarBank@NUS Repository.
Abstract: Soft breakdown in ultrathin gate oxide has been studied using constant voltage stressing. The behavior of current increments resulting from a number of soft breakdown events has been characterized by statistical distribution. It is shown that the distribution of the current increment follows Weibull distribution rather than Log Normal distribution. The newly established Weibull slope is shown to be independent of the stressed voltage in the range investigated between 4.5 and 5.1 V. The temperature effect study shows that the Weibull slope reduces with increasing testing temperature. Furthermore, a strong dependence of the Weibull slope on the oxide thickness has been found. These observations can be well explained by geometrical configurations of percolation path.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57638
ISSN: 07413106
Appears in Collections:Staff Publications

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