Please use this identifier to cite or link to this item:
|Title:||The role of Ni buffer layer on high yield low temperature hermetic wafer bonding using In/Sn/Cu metallization|
|Citation:||Yu, D.-Q., Lee, C., Yan, L.L., Choi, W.K., Yu, A., Lau, J.H. (2009). The role of Ni buffer layer on high yield low temperature hermetic wafer bonding using In/Sn/Cu metallization. Applied Physics Letters 94 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3074367|
|Abstract:||Low temperature hermetic wafer bonding using In/Sn interlayer and Au/Ni/Cu metallization as the high-melting-point (HMP) components was reported, wherein the thin Ni layer was introduced as a buffer layer to prevent solder consumption after their deposition. 8 in. wafer to wafer bonding was achieved at 180 °C for 20 min under 5.5 Mpa. Voids free seal joints composed of high temperature intermetallic compounds were obtained with good hermeticity. Present results show that the buffer layer is the key to ensure high yield hermetic wafer bonding when the low-melting-point solder was deposited directly on the HMP component. © 2009 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 11, 2018
WEB OF SCIENCETM
checked on Nov 26, 2018
checked on Nov 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.