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|Title:||Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy|
|Authors:||Oh, H.J. |
|Citation:||Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L. (2008). Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy. Applied Physics Letters 93 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2968293|
|Abstract:||Interfacial reaction study using x-ray photoelectron spectroscopy was carried out for metal-organic chemical-vapor-deposited Hf O2 and HfAlO gate dielectrics on p- In0.53 Ga0.47 As layer as compared to the cases of p -GaAs substrate. The results show that the alloying of GaAs with InAs (In0.53 Ga0.47 As) in the III-V channel layer and the alloying Hf O2 with Al2 O3 in the high- k dielectric can be an effective way to improve the interface quality due to their significant suppression effects on native oxides formation, especially arsenic oxide which causes Fermi level pinning on the high- k /III-V channel interface during the fabrication processes. Transmission electron microscopy result and the electrical characteristics of HfAlOp- In0.53 Ga0.47 As capacitors further validate the x-ray photoelectron spectroscopy observations. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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