Please use this identifier to cite or link to this item:
|Title:||Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy|
|Authors:||Oh, H.J. |
|Citation:||Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L. (2008). Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy. Applied Physics Letters 93 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2968293|
|Abstract:||Interfacial reaction study using x-ray photoelectron spectroscopy was carried out for metal-organic chemical-vapor-deposited Hf O2 and HfAlO gate dielectrics on p- In0.53 Ga0.47 As layer as compared to the cases of p -GaAs substrate. The results show that the alloying of GaAs with InAs (In0.53 Ga0.47 As) in the III-V channel layer and the alloying Hf O2 with Al2 O3 in the high- k dielectric can be an effective way to improve the interface quality due to their significant suppression effects on native oxides formation, especially arsenic oxide which causes Fermi level pinning on the high- k /III-V channel interface during the fabrication processes. Transmission electron microscopy result and the electrical characteristics of HfAlOp- In0.53 Ga0.47 As capacitors further validate the x-ray photoelectron spectroscopy observations. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 11, 2018
WEB OF SCIENCETM
checked on Jul 17, 2018
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.