Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2201618
Title: Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing
Authors: Liu, H.F. 
Xiang, N. 
Chua, S.J.
Pessa, M.
Issue Date: 1-May-2006
Citation: Liu, H.F., Xiang, N., Chua, S.J., Pessa, M. (2006-05-01). Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing. Applied Physics Letters 88 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2201618
Abstract: We have investigated structural and optical properties of Ga1-x Inx AsGaAs and Ga1-x Inx Ny As1-y Ga Nz As1-z multiple quantum wells. The evolution of x-ray diffraction rocking curves during thermal treatment of the samples indicates that there is observable GaIn interdiffusion across the heterointerfaces at high sample temperatures. X-ray diffraction also indicates that the diffusion length of the atoms decreases with an increase in nitrogen concentration, while the interface roughness, which exhibits remarkable changes for the two different quantum wells, only plays a minor role in diffusion. Structural stability of the Ga1-x Inx Ny As1-y Ga Nz As1-z quantum wells against temperature variations is better than that of the Ga1-x Inx AsGaAs quantum wells. These observations can be accounted for by assuming that nitrogen has a tendency to suppress GaIn interdiffusion across the heterojunctions. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57528
ISSN: 00036951
DOI: 10.1063/1.2201618
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