Please use this identifier to cite or link to this item:
|Title:||Stress development of germanium nanocrystals in silicon oxide matrix|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K., Chew, H.G., Zheng, F., Chim, W.K., Foo, Y.L., Fitzgerald, E.A. (2006). Stress development of germanium nanocrystals in silicon oxide matrix. Applied Physics Letters 89 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2354012|
|Abstract:||The authors demonstrate from their Raman and transmission electron microscopy results that the annealing ambient, temperature, and duration play a significant role in the formation, the evolution, and the crystallinity of Ge nanocrystals in silicon oxide matrix. With careful etching experiments, the authors established that the compressive stress experienced by the nanocrystals in the oxide matrix is intimately linked to the density, the size, and the quality of the Ge nanocrystals. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 12, 2018
WEB OF SCIENCETM
checked on Jun 5, 2018
checked on May 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.