Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2354012
Title: Stress development of germanium nanocrystals in silicon oxide matrix
Authors: Choi, W.K. 
Chew, H.G.
Zheng, F.
Chim, W.K.
Foo, Y.L.
Fitzgerald, E.A.
Issue Date: 2006
Citation: Choi, W.K., Chew, H.G., Zheng, F., Chim, W.K., Foo, Y.L., Fitzgerald, E.A. (2006). Stress development of germanium nanocrystals in silicon oxide matrix. Applied Physics Letters 89 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2354012
Abstract: The authors demonstrate from their Raman and transmission electron microscopy results that the annealing ambient, temperature, and duration play a significant role in the formation, the evolution, and the crystallinity of Ge nanocrystals in silicon oxide matrix. With careful etching experiments, the authors established that the compressive stress experienced by the nanocrystals in the oxide matrix is intimately linked to the density, the size, and the quality of the Ge nanocrystals. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57527
ISSN: 00036951
DOI: 10.1063/1.2354012
Appears in Collections:Staff Publications

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