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|Title:||Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing|
|Citation:||Wang, G.H., Toh, E.-H., Wang, X., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.-M., Balakumar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2007). Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing. Applied Physics Letters 91 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2803853|
|Abstract:||Incorporation of tin (Sn) in substitutional sites in strained Si0.75 Ge0.25 was demonstrated by Sn implant and pulsed laser annealing. The surface of Si0.75 Ge0.25 was amorphized by Sn implant but was recrystallized after pulsed laser annealing. The crystalline Si1-x-y Gex Sny layer formed was studied by Rutherford backscattering spectrometry and Raman spectroscopy. A substitutionality up to 62% Sn and 80% Ge was obtained at an optimal laser power of 400 mJ cm-2 for five laser pulses. A compressive strain of -1.15% was also obtained due to Sn incorporation. The presence of Sn also increased the active B dopant concentration in activating Si1-x-y Gex Sny to give low sheet resistance. The implantation of Sn and B followed by pulsed laser annealing could be useful for application in strain engineering of high mobility metal-oxide-semiconductor field-effect transistors. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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