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|Title:||Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors|
|Source:||Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-10). Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors. IEEE Electron Device Letters 28 (10) : 905-908. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.905406|
|Abstract:||Further enhancement of performance in a strained p-channel multiple-gate or fin field-effect transistor (FinFET) device is demonstrated by utilizing an extended-II-shaped SiGe source/drain (S/D) stressor compared to that utilizing only II-shaped SiGe S/D. With the usage of a longer hydrofluoric acid cleaning time prior to the selective-epitaxy-raised S/D growth, a recess in the buried oxide is formed. This recess allows the subsequent SiGe growth on the fin sidewalls of the S/D regions to extend into the recessed buried oxide to provide a larger compressive stress in the channel for enhanced electrical performance compared to a device with SiGe S/D stressor. Process simulation shows that longitudinal compressive stress in the channel region is higher in a FinFET with extended-II-SiGe S/D than that with II-SiGe S/D. An enhancement of 26% in the drive current was experimentally observed, demonstrating further boost in enhancement of strained p-channel FinFET with little additional cost using this novel process. © 2007 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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