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|Title:||Strain relaxation in graded InGaN/GaN epilayers grown on sapphire|
|Citation:||Song, T.L., Chua, S.J., Fitzgerald, E.A., Chen, P., Tripathy, S. (2003-08-25). Strain relaxation in graded InGaN/GaN epilayers grown on sapphire. Applied Physics Letters 83 (8) : 1545-1547. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1598295|
|Abstract:||A study was performed on strain relaxation in graded GaN/InGaN epilayers, which were grown on sapphire. The function of the intermediate thin GaN layer was to progressively relax the strain that builds up in the InGaN layer. It was found that more dislocations would be generated, if the InGaN layers were graded too rapidly.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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