Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1598295
Title: Strain relaxation in graded InGaN/GaN epilayers grown on sapphire
Authors: Song, T.L.
Chua, S.J. 
Fitzgerald, E.A.
Chen, P.
Tripathy, S.
Issue Date: 25-Aug-2003
Source: Song, T.L., Chua, S.J., Fitzgerald, E.A., Chen, P., Tripathy, S. (2003-08-25). Strain relaxation in graded InGaN/GaN epilayers grown on sapphire. Applied Physics Letters 83 (8) : 1545-1547. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1598295
Abstract: A study was performed on strain relaxation in graded GaN/InGaN epilayers, which were grown on sapphire. The function of the intermediate thin GaN layer was to progressively relax the strain that builds up in the InGaN layer. It was found that more dislocations would be generated, if the InGaN layers were graded too rapidly.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57524
ISSN: 00036951
DOI: 10.1063/1.1598295
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