Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3000481
Title: Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
Authors: Madan, A.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2008
Source: Madan, A., Samudra, G., Yeo, Y.-C. (2008). Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors. Journal of Applied Physics 104 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3000481
Abstract: The potential of Si1-x Gex source and drain strained silicon p -channel transistors is investigated for ultrathin body silicon-on-insulator (SOI) substrates. We used process simulations to quantify and understand the role of device design parameters such as raised source and drain, source and drain length, and recess depth in the context of SOI transistors. Simultaneous strain calculations were performed with the process flow to capture not only lattice mismatch, but all process induced strain. Germanium condensation technique was found suitable for enhancing strain in ultrathin body transistors by increasing germanium concentration and driving germanium deeper into the source and drain. The scalability of germanium condensation process is discussed. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/57523
ISSN: 00218979
DOI: 10.1063/1.3000481
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