Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1098(02)00386-1
Title: Spin-injection across a magnetic-electric barrier structure
Authors: Jiang, Y.
Jalil, M.B.A. 
Keywords: A. Nanostructures
A. Semiconductors
D. Tunelling
Issue Date: Sep-2002
Source: Jiang, Y., Jalil, M.B.A. (2002-09). Spin-injection across a magnetic-electric barrier structure. Solid State Communications 123 (11) : 501-504. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1098(02)00386-1
Abstract: In this paper, we propose a new structure for performing the spin-injection in semiconductors based on the combination of a triangular electrical barrier and non-homogeneous magnetic fields in a two-dimensional electron gas. Using the single particle effective mass approximation, the spin-polarized transport properties are calculated for this structure. An obvious spin-polarization effect is observed and strongly depends on the incident wave vector parallel to the barrier, the incident electron energy and the height of the electrical potential. The spin-injection rate is found to be more susceptible to the electrical potential and the magnetic field. © 2002 Published by Elsevier Science Ltd.
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/57493
ISSN: 00381098
DOI: 10.1016/S0038-1098(02)00386-1
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