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|Title:||Spin-injection across a magnetic-electric barrier structure|
|Citation:||Jiang, Y., Jalil, M.B.A. (2002-09). Spin-injection across a magnetic-electric barrier structure. Solid State Communications 123 (11) : 501-504. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1098(02)00386-1|
|Abstract:||In this paper, we propose a new structure for performing the spin-injection in semiconductors based on the combination of a triangular electrical barrier and non-homogeneous magnetic fields in a two-dimensional electron gas. Using the single particle effective mass approximation, the spin-polarized transport properties are calculated for this structure. An obvious spin-polarization effect is observed and strongly depends on the incident wave vector parallel to the barrier, the incident electron energy and the height of the electrical potential. The spin-injection rate is found to be more susceptible to the electrical potential and the magnetic field. © 2002 Published by Elsevier Science Ltd.|
|Source Title:||Solid State Communications|
|Appears in Collections:||Staff Publications|
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