Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.77.085424
Title: Spin tunneling in multilayer spintronic devices
Authors: Tan, S.G. 
Jalil, M.B.A. 
Kumar, S.B. 
Liang, G.-C. 
Issue Date: 20-Feb-2008
Source: Tan, S.G., Jalil, M.B.A., Kumar, S.B., Liang, G.-C. (2008-02-20). Spin tunneling in multilayer spintronic devices. Physical Review B - Condensed Matter and Materials Physics 77 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.77.085424
Abstract: We introduce a spin tunneling theory across the interfaces of multilayer spintronic devices, e.g., spin valves and magnetic random access memories, which integrates the microscopic Green's function formalism for electron propagation within the interfacial barrier with the macroscale spin-dependent Boltzmann theory, which governs the spin accumulation in the adjacent contacts. This multiscale approach makes possible the detailed studies of interfacial properties (e.g., height, shape, and spin asymmetry) required to achieve high spin injection via tunneling. Based on the calculated results, the optimal interfacial properties have been identified for possible experimental verification. © 2008 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/57485
ISSN: 10980121
DOI: 10.1103/PhysRevB.77.085424
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