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|Title:||SPICE behavioral model of the tunneling field-effect transistor for circuit simulation|
Tunneling field-effect transistor (TFET)
|Citation:||Hong, Y., Yang, Y., Yang, L., Samudra, G., Heng, C.-H., Yeo, Y.-C. (2009-12). SPICE behavioral model of the tunneling field-effect transistor for circuit simulation. IEEE Transactions on Circuits and Systems II: Express Briefs 56 (12) : 946-950. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2009.2035274|
|Abstract:||The tunneling field-effect transistor (TFET) is an alternative device for deep-submicrometer CMOS with very good short channel and leakage characteristics. In this brief, a SPICE behavioral model that well captures the I-V characteristics and the parasitic capacitance of the n-channel TFET is proposed to facilitate efficient circuit design and simulation. The validity of the model is verified with technology computer-aided design (TCAD) simulation. The accuracy is within 10% and is of an order of magnitude faster than the TCAD. © 2009 IEEE.|
|Source Title:||IEEE Transactions on Circuits and Systems II: Express Briefs|
|Appears in Collections:||Staff Publications|
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