Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCSII.2009.2035274
Title: SPICE behavioral model of the tunneling field-effect transistor for circuit simulation
Authors: Hong, Y.
Yang, Y.
Yang, L.
Samudra, G. 
Heng, C.-H. 
Yeo, Y.-C. 
Keywords: Behavioral modeling
Inverter
SPICE simulation
Tunneling field-effect transistor (TFET)
Issue Date: Dec-2009
Source: Hong, Y., Yang, Y., Yang, L., Samudra, G., Heng, C.-H., Yeo, Y.-C. (2009-12). SPICE behavioral model of the tunneling field-effect transistor for circuit simulation. IEEE Transactions on Circuits and Systems II: Express Briefs 56 (12) : 946-950. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2009.2035274
Abstract: The tunneling field-effect transistor (TFET) is an alternative device for deep-submicrometer CMOS with very good short channel and leakage characteristics. In this brief, a SPICE behavioral model that well captures the I-V characteristics and the parasitic capacitance of the n-channel TFET is proposed to facilitate efficient circuit design and simulation. The validity of the model is verified with technology computer-aided design (TCAD) simulation. The accuracy is within 10% and is of an order of magnitude faster than the TCAD. © 2009 IEEE.
Source Title: IEEE Transactions on Circuits and Systems II: Express Briefs
URI: http://scholarbank.nus.edu.sg/handle/10635/57473
ISSN: 15497747
DOI: 10.1109/TCSII.2009.2035274
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