Please use this identifier to cite or link to this item:
|Title:||Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation|
Parasitic series resistance
Schottky barrier (SB)
|Citation:||Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Chan, L., Samudra, G., Yeo, Y.-C. (2008-07). Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation. IEEE Electron Device Letters 29 (7) : 756-758. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.923712|
|Abstract:||We report the first integration of a novel solid Antimony (Sb) segregation (SSbS) process in a transistor fabrication flow. A thin solid Sb layer, which acts as a large source of n-type dopants, was deposited beneath a metallic nickel layer prior to source-drain silicidation. Following nickel silicidation, a very high concentration of Sb was incorporated at the NiSi/Si interface. The SSbS process is demonstrated to reduce the effective Schottky barrier (SB) height and parasitic series resistance in an n-channel field-effect transistor, leading to enhanced drive current performance without degradation in the OFF-state leakage current. Performance enhancement is also maintained when the supply voltage is reduced from 1.3 to 0.8 V. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Oct 30, 2018
checked on Oct 13, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.