Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2222343
Title: Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate
Authors: Balakumar, S.
Tung, C.H.
Lo, G.Q.
Kumar, R.
Balasubramanian, N.
Kwong, D.L.
Fei, G.
Lee, S.J. 
Issue Date: 2006
Source: Balakumar, S., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.L., Fei, G., Lee, S.J. (2006). Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate. Applied Physics Letters 89 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2222343
Abstract: We report the solid phase epitaxial growth of silicon germanium (SiGe) layer during condensation/ oxidation of sputter deposited amorphous SiGe layer on Si on insulator (SOI). The amorphous SiGe layer was first converted into polycrystalline film by preannealing and high temperature oxidation process. The solid phase epitaxial growth occurs during further oxidation/annealing process of polycrystalline SiGe on the Si on insulator substrate. A final thickness of about 1040 Å of single crystalline SiGe is achieved with initial amorphous SiGe and SOI of thickness of 1000 and 740 Å, respectively SiGe with 60% Ge concentration was achieved on further condensation followed by cyclic annealing to eliminate the defects formed in the layer. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57442
ISSN: 00036951
DOI: 10.1063/1.2222343
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Dec 14, 2017

WEB OF SCIENCETM
Citations

6
checked on Nov 17, 2017

Page view(s)

36
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.