Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2008.01.012
Title: Site-specific growth of ZnO nanowires from patterned Zn via compatible semiconductor processing
Authors: Law, J.B.K.
Boothroyd, C.B.
Thong, J.T.L. 
Keywords: A1. Crystal structure
A1. Growth model
A1. Nanostructures
A2. Thermal oxidation
A3. Patterned growth
B1. ZnO nanowires
Issue Date: 1-May-2008
Source: Law, J.B.K., Boothroyd, C.B., Thong, J.T.L. (2008-05-01). Site-specific growth of ZnO nanowires from patterned Zn via compatible semiconductor processing. Journal of Crystal Growth 310 (10) : 2485-2492. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2008.01.012
Abstract: An alternative method for site-selective growth of ZnO nanowires without the use of an Au catalyst or a ZnO thin-film seed layer is presented. Using conventional lithography and metallization semiconductor processing steps, regions for selective nanowire growth are defined using Zn, which acts as a self-catalyst for subsequent ZnO nanowire growth via a simple thermal oxidation process. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction reveal that the nanowires grown by this technique are single-crystalline wurtzite ZnO. Room temperature photoluminescence exhibits strong ultraviolet emission from these nanowires, indicating good optical properties. A series of experiments was conducted to elucidate the unique growth behavior of these nanowires directly from the Zn grains and a growth model is proposed. © 2008 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/57426
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2008.01.012
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