Please use this identifier to cite or link to this item:
|Title:||Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate|
|Authors:||Han, G. |
|Citation:||Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C. (2011-04-11). Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate. Applied Physics Letters 98 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3579242|
|Abstract:||Si-based tunneling field-effect transistors (TFETs) with elevated Ge source were fabricated on Si(110) substrate. The in situ B-doped Ge (Ge:B) source grown on Si(110) has a substitutional B concentration up to 7.8× 1020 cm-3, that is more than one order of magnitude higher than that in Ge grown on Si(100) under the same growth conditions. Ge:B epitaxy on (110) and (100) Si is discussed. The TFET with elevated Ge source formed on Si(110) has a subthreshold swing of 85 mV/decade, which is a substantial improvement over that of the control TFET formed on Si(100). This is attributed to the high B doping concentration in the Ge:B(110) source as well as the band gap narrowing effect. © 2011 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 21, 2018
WEB OF SCIENCETM
checked on Sep 11, 2018
checked on Aug 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.