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|Title:||Silicon two-dimensional phononic crystal resonators using alternate defects|
|Citation:||Wang, N., Hsiao, F.-L., Palaniapan, M., Lee, C. (2011-12-05). Silicon two-dimensional phononic crystal resonators using alternate defects. Applied Physics Letters 99 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3665956|
|Abstract:||We present the numerical and experimental investigations of micromechanical resonators made by creating alternate defects with different central-hole radii (r′) in a two-dimensional (2-D) phononic crystal (PnC) slab. The PnC structures were fabricated by etching a square array of cylindrical air holes in a 10 m thick free-standing silicon plate using a CMOS-compatible process. Preliminary experimental results show that the performance of the PnC resonators in terms of resonant frequency, Q factor, and insertion loss (IL) is highly dependent on r′. A Q factor of more than 3000 is achieved for the case of r′ 6 m while all the designed resonators with alternate defects have higher Q factor and lower IL than the resonators based on the normal Fabry-Perot structure due to the reduction in the mode mismatch. © 2011 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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