Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000966
Title: Self-heating-induced spatial spread of interface state generation by hot-electron effect: Role of the high-energy tail electron
Authors: Ang, D.S.
Phua, T.W.H.
Ling, C.H. 
Keywords: Channel temperature
High-energy tail electrons
Hot-carrier effect
Strained-Si/SiGe heterostructure
Issue Date: Aug-2008
Source: Ang, D.S., Phua, T.W.H., Ling, C.H. (2008-08). Self-heating-induced spatial spread of interface state generation by hot-electron effect: Role of the high-energy tail electron. IEEE Electron Device Letters 29 (8) : 934-937. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000966
Abstract: The spatial spread of interface states generated by hot-electron effect in the nMOSFET is shown to be significantly increased by self-heating. Substantial generation of interface states in the channel region of the wide-channel strained-Si/SiGe nMOSFET, which suffers from significant self-heating, is observed at a very short stress time. The initial spread of the interface damage is significantly reduced in the narrow-channel strained-Si device, which exhibits a much lesser degree of self-heating. Evidence suggests that the increased spread in the spatial distribution of the interface damage is due to a small fraction of excess "superhot"electrons, which have gained additional energy from phonon absorption. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57368
ISSN: 07413106
DOI: 10.1109/LED.2008.2000966
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